PART |
Description |
Maker |
HYS72V2200GU-10 HYS72V2200GU-8 HYS64V2200GU-10 HYS |
Network Cable Assembly; Connector Type A:T568A/B Modular Plug; Connector Type B:T568A/B Modular Plug; Cable Length:7ft; Approval Categories:Augmented Category 6 standards; cord color per TIA/EIA-606 standard RoHS Compliant: Yes 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 72 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168 KPT 3C 3#20 SKT PLUG 3.3 2米x 64/72-Bit一银行内存模块3.3 4米64/72-Bit 2银行内存模块 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module
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Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG SIEMENS A G
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ADS7608A4A ADS7608A4A-5 ADS7608A4A-55 ADS7608A4A-6 |
Synchronous DRAM(4M X 8 Bit X 4 Banks) Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行 Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行 133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
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ADATA Technology Co., Ltd. A-DATA[A-Data Technology]
|
5962F9671601VEC 5962F9671601VXC FN4095 ACTS161MS A |
Radiation Hardened 4-Bit Synchronous Counter From old datasheet system Synchronous Counter, 4-Bit, TTL Inputs, Rad-Hard, Advanced Logic, CMOS
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INTERSIL[Intersil Corporation]
|
HD74LV163A |
Synchronous 4-bit Binary Counter (Synchronous Clear)
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HITACHI[Hitachi Semiconductor]
|
M12L64322A-6TG M12L64322A-5BG |
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86 512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 4.5 ns, PBGA90
|
Elite Semiconductor Memory Technology, Inc.
|
K7A403609A K7A401809A K7A403609B |
256K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet 128K x 36-Bit Synchronous Pipelined Burst SRAM Data Sheet 128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM 128Kx36/x32 & 256Kx18 Synchronous SRAM
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Samsung Electronic SAMSUNG[Samsung semiconductor]
|
QS74FCT163T QS74FCT161T QS74FCT163ATP QS74FCT161CT |
Synchronous Up Counter 同步设立摊位 (QS74FCT161T) High Speed CMOS Synchronous Presettable 4 Bit Binary Counters (QS74FCT163T) High Speed CMOS Synchronous Presettable 4 Bit Binary Counters
|
Quality
|
MC-458CA721XSA MC-458CA721XSA-A80 MC-458CA721ESA |
8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) 8M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144 SODIMM-144
|
Elpida Memory, Inc.
|
MC-458CA727PFA-A75 MC-458CA727EFA-A75 |
8M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 DIMM-168 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory, Inc.
|
K7A403200B K7A403200B-QC K7A403201B K7A403201B-QC |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K7A401800M |
256K x 18-Bit Synchronous Pipelined Burst SRAM Rev. 2.0 (Dec. 1999) 256Kx18 Synchronous SRAM
|
Samsung Electronic Samsung semiconductor
|
CA20-600 CD20-600 CA44-703 CB44-703 CA26-700A |
5V range 8-bit MCU with 8 to 32K Flash, 10-bit ADC, 4 timers, SPI, SCI interface Very low drop voltage regulators with inhibit SYNCHRONOUS PROGRAMMABLE 4-BIT COUNTERS
|
ITT, Corp.
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